The energy loss method is depended on the resolution of the detector and the ion energy E - e望远镜方法对同量异位素的分辨本领取决于e和e探测器的能量分辨本领和离子所带能量的高低。
With increasing implantation dose , the thickness of the box layer increases while that of the si over - layer decreases . the thickness of the si over - layer is dependent of the ion energy 通过调节注入能量可获得所需要的不同表层硅厚度的soi结构材料,但为获得高质量的soi材料,注入能量需要和注入剂量有合适的匹配。
It has been shown from numerical results that as increasing the discharge pressure , bimodal - peaks distributions for the ion energy become gradually single - peak distributions and low - energy ions increase 数值结果表明:随着放电气压增加,离子在基板上的能量分布逐渐地由双峰分布变成单峰分布,而且低能离子的数目也逐渐地增加。